Near-infrared quantum dot photoelectric detector with double absorption peaks and preparation method thereof

The invention discloses a near-infrared quantum dot photoelectric detector with double absorption peaks and a preparation method of the near-infrared quantum dot photoelectric detector, and belongs to the field of photoelectric detection. The detector utilizes two PN junctions overlapped in the vertical direction to detect near-infrared light and structurally comprises an Al2O3 layer, a graphene electrode layer, a Bi2Se3 layer, a second quantum dot photosensitive layer, an Ag2Se layer, a first quantum dot photosensitive layer, a Bi2Se3 layer, a graphene electrode layer, a silicon nitride insulating layer and a quantum dot filter layer from bottom to top. According to the invention, by designing a device structure in which two PN junctions are reversely connected in series in the vertical direction, quantum dot materials with different absorption peaks are selected as the first quantum dot photosensitive layer and the second quantum dot photosensitive layer, so that the structure can be applied to the light em