THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME

A thin film transistor includes an active layer; and a gate electrode spaced apart from the active layer to at least partially overlap the active layer in a plan view, the active layer including a channel region overlapping the gate electrode in the plan view, a source region connected to one side o...

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Bibliographische Detailangaben
Hauptverfasser: JUNG JIN WON, CHOI SUNG-JOO, SEOL HYUN JOO, KANG DONG-YEON, PARK JAEYOON
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:A thin film transistor includes an active layer; and a gate electrode spaced apart from the active layer to at least partially overlap the active layer in a plan view, the active layer including a channel region overlapping the gate electrode in the plan view, a source region connected to one side of the channel region without overlapping the gate electrode in the plan view, and a drain region connected to the other side of the channel region without overlapping the gate electrode in plan view. The source region and the drain region are spaced apart from each other with the channel region interposed therebetween. The active layer includes a first source conductive control region and a first drain conductive control region spaced apart from each other. The first source conductive control region corresponds to at least a portion of the channel region in a plan view, and the first drain conductive control region corresponds to at least a portion of the channel region in the plan view. 一种薄膜晶体管包括有源层;和栅电极,所述栅电极与有源层