Controllable intermediate infrared heat radiator and control and preparation method thereof

The invention relates to an adjustable intermediate infrared heat radiator and an adjusting and preparing method thereof. The adjustable and controllable intermediate infrared heat radiator comprises a fused quartz or monocrystalline silicon substrate, an Ag back reflection layer formed on the subst...

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Bibliographische Detailangaben
Hauptverfasser:	SONG RUMENG, ZHANG YAN, WU LINGNAN, SONG LIXIN, ZHANG YUZHI, MA JIAYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to an adjustable intermediate infrared heat radiator and an adjusting and preparing method thereof. The adjustable and controllable intermediate infrared heat radiator comprises a fused quartz or monocrystalline silicon substrate, an Ag back reflection layer formed on the substrate, a first phase change film layer VO2 formed on the back reflection layer, a second phase change film layer Ge8Sb2Te11 formed on the first phase change film layer, and a third phase change film layer VO2 formed on the second phase change film layer VO2 formed on the second phase change film layer VO2 formed on the first phase change film layer VO2. The dielectric layer is formed on the second phase change film layer, and the amorphous germanium antimony tellurium Ge8Sb2Te11 is formed on the second phase change film layer; the total thickness of the back reflection layer, the first phase change film layer, the second phase change film layer and the dielectric layer is smaller than one fourth of the working wavel