Polishing solution for efficiently and selectively removing silicon material on surface of heterostructure
The invention discloses a polishing solution for realizing efficient and selective removal of a silicon material on a heterostructure surface, the polishing solution comprises 0-40 wt% of grinding particles, 0.01-15 wt% of a polishing accelerating agent, 0-5 wt% of a compound selective adsorbent, de...
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| creator | CHEN LEI WU QINGGUO ZHANG DENGYI DANG SHEHUI QIAN LINMAO LUO CHUNSHENG LIU SHUAI CHENG LI |
| description | The invention discloses a polishing solution for realizing efficient and selective removal of a silicon material on a heterostructure surface, the polishing solution comprises 0-40 wt% of grinding particles, 0.01-15 wt% of a polishing accelerating agent, 0-5 wt% of a compound selective adsorbent, deionized water and a pH value regulator, the pH value regulator is used for regulating the pH value of the polishing solution to 6-11.5, and wt% represents the mass percentage. According to the polishing solution for efficiently and selectively removing the silicon material on the surface of the heterostructure, provided by the invention, a certain mass fraction of the polishing accelerating agent and the compound selective adsorbent with selective adsorbability on a bottom layer material are added; by means of the method, the heterostructure surface silicon material obtains the material removal rate exceeding the micron order per minute and the silicon surface with the sub-nanometer precision, the high removal sele |
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According to the polishing solution for efficiently and selectively removing the silicon material on the surface of the heterostructure, provided by the invention, a certain mass fraction of the polishing accelerating agent and the compound selective adsorbent with selective adsorbability on a bottom layer material are added; by means of the method, the heterostructure surface silicon material obtains the material removal rate exceeding the micron order per minute and the silicon surface with the sub-nanometer precision, the high removal sele</description><language>chi ; eng</language><subject>ADHESIVES ; CHEMISTRY ; DYES ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SKI WAXES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240611&DB=EPODOC&CC=CN&NR=118165652A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240611&DB=EPODOC&CC=CN&NR=118165652A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN LEI</creatorcontrib><creatorcontrib>WU QINGGUO</creatorcontrib><creatorcontrib>ZHANG DENGYI</creatorcontrib><creatorcontrib>DANG SHEHUI</creatorcontrib><creatorcontrib>QIAN LINMAO</creatorcontrib><creatorcontrib>LUO CHUNSHENG</creatorcontrib><creatorcontrib>LIU SHUAI</creatorcontrib><creatorcontrib>CHENG LI</creatorcontrib><title>Polishing solution for efficiently and selectively removing silicon material on surface of heterostructure</title><description>The invention discloses a polishing solution for realizing efficient and selective removal of a silicon material on a heterostructure surface, the polishing solution comprises 0-40 wt% of grinding particles, 0.01-15 wt% of a polishing accelerating agent, 0-5 wt% of a compound selective adsorbent, deionized water and a pH value regulator, the pH value regulator is used for regulating the pH value of the polishing solution to 6-11.5, and wt% represents the mass percentage. According to the polishing solution for efficiently and selectively removing the silicon material on the surface of the heterostructure, provided by the invention, a certain mass fraction of the polishing accelerating agent and the compound selective adsorbent with selective adsorbability on a bottom layer material are added; by means of the method, the heterostructure surface silicon material obtains the material removal rate exceeding the micron order per minute and the silicon surface with the sub-nanometer precision, the high removal sele</description><subject>ADHESIVES</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEKwkAQRdNYiHqH8QAWURJsJShWYmEvyzprRiY7YWc24O1dxANY_f8f_82r11WYtKf4BBXORhIhSAIMgTxhNH6Diw9QZPRGE5adcJDpaxCTL8LgDBM5htI1p-A8ggTosWBRS9lbTrisZsGx4uqXi2p9Ot668wZHuaOOxYpo9-5S1_u6bdpme9j98_kAS9hCcA</recordid><startdate>20240611</startdate><enddate>20240611</enddate><creator>CHEN LEI</creator><creator>WU QINGGUO</creator><creator>ZHANG DENGYI</creator><creator>DANG SHEHUI</creator><creator>QIAN LINMAO</creator><creator>LUO CHUNSHENG</creator><creator>LIU SHUAI</creator><creator>CHENG LI</creator><scope>EVB</scope></search><sort><creationdate>20240611</creationdate><title>Polishing solution for efficiently and selectively removing silicon material on surface of heterostructure</title><author>CHEN LEI ; WU QINGGUO ; ZHANG DENGYI ; DANG SHEHUI ; QIAN LINMAO ; LUO CHUNSHENG ; LIU SHUAI ; CHENG LI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118165652A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>ADHESIVES</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN LEI</creatorcontrib><creatorcontrib>WU QINGGUO</creatorcontrib><creatorcontrib>ZHANG DENGYI</creatorcontrib><creatorcontrib>DANG SHEHUI</creatorcontrib><creatorcontrib>QIAN LINMAO</creatorcontrib><creatorcontrib>LUO CHUNSHENG</creatorcontrib><creatorcontrib>LIU SHUAI</creatorcontrib><creatorcontrib>CHENG LI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN LEI</au><au>WU QINGGUO</au><au>ZHANG DENGYI</au><au>DANG SHEHUI</au><au>QIAN LINMAO</au><au>LUO CHUNSHENG</au><au>LIU SHUAI</au><au>CHENG LI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Polishing solution for efficiently and selectively removing silicon material on surface of heterostructure</title><date>2024-06-11</date><risdate>2024</risdate><abstract>The invention discloses a polishing solution for realizing efficient and selective removal of a silicon material on a heterostructure surface, the polishing solution comprises 0-40 wt% of grinding particles, 0.01-15 wt% of a polishing accelerating agent, 0-5 wt% of a compound selective adsorbent, deionized water and a pH value regulator, the pH value regulator is used for regulating the pH value of the polishing solution to 6-11.5, and wt% represents the mass percentage. According to the polishing solution for efficiently and selectively removing the silicon material on the surface of the heterostructure, provided by the invention, a certain mass fraction of the polishing accelerating agent and the compound selective adsorbent with selective adsorbability on a bottom layer material are added; by means of the method, the heterostructure surface silicon material obtains the material removal rate exceeding the micron order per minute and the silicon surface with the sub-nanometer precision, the high removal sele</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES CHEMISTRY DYES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES |
| title | Polishing solution for efficiently and selectively removing silicon material on surface of heterostructure |
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