Polishing solution for efficiently and selectively removing silicon material on surface of heterostructure

The invention discloses a polishing solution for realizing efficient and selective removal of a silicon material on a heterostructure surface, the polishing solution comprises 0-40 wt% of grinding particles, 0.01-15 wt% of a polishing accelerating agent, 0-5 wt% of a compound selective adsorbent, deionized water and a pH value regulator, the pH value regulator is used for regulating the pH value of the polishing solution to 6-11.5, and wt% represents the mass percentage. According to the polishing solution for efficiently and selectively removing the silicon material on the surface of the heterostructure, provided by the invention, a certain mass fraction of the polishing accelerating agent and the compound selective adsorbent with selective adsorbability on a bottom layer material are added; by means of the method, the heterostructure surface silicon material obtains the material removal rate exceeding the micron order per minute and the silicon surface with the sub-nanometer precision, the high removal sele