Semiconductor device

The invention relates to a semiconductor device. The semiconductor device includes: a stack structure including a plurality of horizontal recesses vertically spaced apart from each other; a barrier layer forming a liner of the horizontal recess; the interface control layer covers the barrier layer, and the interface control layer comprises a conductive barrier element and a dielectric barrier element; the interface compound layer is arranged between the interface control layer and the barrier layer; the gate electrode is filled in the horizontal concave part and is positioned on the interface control layer, and the barrier layer comprises a silicon oxide layer, a silicon oxide layer, a silicon oxide layer and a silicon oxide layer; an aluminum oxide layer; and an interface enhancement layer between the silicon oxide layer and the aluminum oxide layer. 本公开涉及一种半导体装置。半导体装置包括：叠层结构，所述叠层结构包括彼此垂直间隔开的多个水平凹部；阻挡层，所述阻挡层形成所述水平凹部的内衬；界面控制层，所述界面控制层覆盖所述阻挡层，所述界面控制层包括导电阻隔元件和介电阻隔元件；界面化合物层，所述界面化合物层设置在所述界面控制层和所述阻挡层之间；以及栅极，所述栅极填充在