Semiconductor device

The invention discloses a semiconductor device, which comprises a gate electrode arranged on a substrate; the source electrode region and the drain electrode region are arranged in the substrate and located on the two sides of the gate electrode respectively, the drain electrode region comprises a plurality of drain electrode blocks which are laterally separated from each other, the plurality of drain electrode blocks have a first conduction type, and the substrate has a second conduction type; the plurality of drain contacts are arranged on the drain region, and each drain region block corresponds to at least one drain contact of the plurality of drain contacts; a drain electrode electrically connected to the plurality of drain contacts; and a source electrode electrically connected to the source region. 本发明公开了一种半导体装置，包括：一闸极电极，设置于一基底上；一源极区和一汲极区，设置于所述基底内，分别位于所述闸极电极的两侧，其中所述汲极区包括彼此侧向隔开的复数个汲极区块，所述复数个汲极区块具有一第一导电类型，且所述基底具有一第二导电类型；复数个汲极接触，设置于所述汲极区上，其中各所述汲极区块对应于所述复数个汲极接触的其中至少一汲极接触；一汲极电极，电连接至所述复数个汲极接触；以及一源极电极，电连接至所述源