Micro light emitting diode and display panel

The invention discloses a micro light-emitting diode and a display panel, and the micro light-emitting diode comprises a semiconductor epitaxial laminated layer which is provided with a first surface and a second surface which are opposite to each other, and comprises a first covering layer, an active layer and a second covering layer which are sequentially stacked in the direction from the first surface to the second surface; the light emitting diode is characterized in that the first covering layer comprises a superlattice structure formed by alternately stacking a first sub-layer and a second sub-layer; the first sub layer is made of a combined Al < x > < 1 > Ga < 1-x > < 1 > InP material; the second sub-layer is made of an Al < x > 2 Ga < 1-x > 2 InP material, wherein x < 1 > is more than 0 and x < 2 > is less than or equal to 1. The first covering layer and/or the second covering layer comprises the superlattice structure, so that the crystal quality of the semiconductor epitaxial laminated layer and the