Diode comprising plurality of Schottky contacts

In a general aspect, a diode (100, 200) includes a substrate (102, 202) and a semiconductor layer (104, 204) of a first conductivity type disposed on the substrate and including a drift region (120, 220); a shielding region (110a, 110b, 210a, 210b) of the second conductivity type, the shielding region being disposed in the semiconductor layer adjacent to the drift region; a first Schottky material (132a, 132b, 236a, 236b) disposed on a portion of the shielding region and a first portion of the drift region, and defining a first Schottky contact (142a, 142b, 246a, 246b) with the drift region; and a second Schottky material (130, 232a, 232b) disposed on a second portion of the drift region, adjacent to the first Schottky material, and defining a second Schottky contact (240, 242a, 242b) with the drift region. The barrier height of the first Schottky contact is smaller than the barrier height of the second Schottky contact. 在一般方面中，一种二极管(100,200)包括：衬底(102,202)和第一导电类型的半导体层(104,204)，该半导体层设置在衬底上并且包括漂移区(120,220)；第二导电