Manufacture and reuse of semiconductor substrates

A method of processing a semiconductor wafer includes forming one or more epitaxial layers over a first major surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers, and the one or more porous layers together form a substrate; forming a doped region of a semiconductor device in the one or more epitaxial layers; and separating a non-porous portion of the semiconductor wafer from a remaining portion of the substrate along the one or more porous layers after forming the doped region of the semiconductor device. 一种处理半导体晶片的方法包括：在所述半导体晶片的第一主表面之上形成一个或多个外延层；在所述半导体晶片中或在所述一个或多个外延层中形成一个或多个多孔层，其中所述半导体晶片、所述一个或多个外延层和所述一个或多个多孔层共同形成衬底；在所述一个或多个外延层中形成半导体装置的掺杂区；并且在形成所述半导体装置的所述掺杂区之后，沿着所述一个或多个多孔层将所述半导体晶片的非多孔部分与所述衬底的其余部分分离。