MEMS pressure transducer chip with hybrid integrated environmental barrier structure and method of manufacturing same
The present disclosure relates to a method for manufacturing a MEMS pressure transducer chip (100) having a hybrid integrated environmental barrier structure (150), the method comprising the steps of: providing a substrate (110) comprising at least one membrane (120); forming a step-like recessed st...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present disclosure relates to a method for manufacturing a MEMS pressure transducer chip (100) having a hybrid integrated environmental barrier structure (150), the method comprising the steps of: providing a substrate (110) comprising at least one membrane (120); forming a step-like recessed structure (130) into the substrate (110), the step-like recessed structure (130) comprising a first recess (131) having a first lateral width (W1) and an adjacent second recess (132) having a larger second lateral width (W2), where the step-like recessed structure (130) extends between the film (120) and a substrate surface (142) opposite the film (120); and arranging an environmental barrier structure (150) inside the second recess (132). The invention further relates to a device capable of being obtained through the method.
本公开涉及一种用于制造具有混合集成环境屏障结构(150)的MEMS压力换能器芯片(100)的方法,该方法包括以下步骤:提供包括至少一个膜(120)的基板(110);向基板(110)中构造阶梯状凹陷结构(130),阶梯状凹陷结构(130)包括具有第一横向宽度(W1)的第一凹部(131)和具有较大的第二横向宽度(W2)的相邻的第二凹部(132),其中阶梯状凹陷结构(130)在膜(120)与 |
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