Light emitting diode and manufacturing method thereof

The invention provides a light-emitting diode and a manufacturing method thereof, and belongs to the field of light-emitting devices. The light emitting diode comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer, the active layer and the second semiconductor layer are sequentially stacked on the surface of the substrate; the strain relaxation structure layer is located between the first semiconductor layer and the active layer, and the strain relaxation structure layer comprises a stress release layer and a relaxation buffer layer. According to the light-emitting diode, the proportion of In atoms in the active layer can be increased, so that the probability of an exciton light-emitting process is increased, and the light-emitting efficiency of the active layer is improved. 本公开提供了一种发光二极管及其制作方法，属于发光器件领域。该发光二极管包括：衬底，依次层叠在所述衬底表面的第一半导体层、有源层、第二半导体层，所述有源层中具有In原子；应变弛豫结构层，位于所述第一半导体层与所述有源层之间，所述应变弛豫结构层包括应力释放层和弛豫缓冲层。该发光二极管可以提升有源层中In原子的