Power semiconductor device comprising Schottky contact super barrier rectifier

The invention relates to the technical field of power semiconductors, in particular to a power semiconductor device comprising a Schottky contact super barrier rectifier. Comprising a drain metal layer, a heavily doped first conductive type substrate layer and a lightly doped first conductive type d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XU XIANGTAO, YU QISHENG, WANG HANG, CHEN WENSUO, ZHANG CHENGFANG, ZHANG LI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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