Power semiconductor device comprising Schottky contact super barrier rectifier

The invention relates to the technical field of power semiconductors, in particular to a power semiconductor device comprising a Schottky contact super barrier rectifier. Comprising a drain metal layer, a heavily doped first conductive type substrate layer and a lightly doped first conductive type drift region, and the heavily doped first conductive type substrate layer and the lightly doped first conductive type drift region are sequentially stacked on the drain metal layer. A second conductive type anode region and a second conductive type gate body region are arranged on the first conductive type conduction region, and the first conductive type conduction region is located between the second conductive type anode region and the second conductive type gate body region. Compared with an existing Schottky source electrode vertical metal oxide semiconductor field effect transistor, the Schottky source electrode vertical metal oxide semiconductor field effect transistor has low third quadrant diode turn-on volt