Method for improving wafer edge state and semiconductor manufacturing equipment

The invention provides a method for improving a wafer edge state and semiconductor manufacturing equipment, and the method for improving the wafer edge state comprises the steps: carrying out the back cleaning of a wafer after the deposition of silicon carbide is completed; monitoring the cleaned wafer to obtain a wafer edge state of the wafer; and based on the wafer edge state of the wafer, back cleaning of the wafer is repeated or subsequent processes are carried out. According to the configuration, after silicon carbide deposition is completed, the back cleaning step is added, and the wafer edge state of the wafer is detected after back cleaning is completed. Therefore, the wafer edge state of the wafer is ensured to be good when the wafer enters the next step, the probability of arc discharge alarm caused by the residual film on the wafer edge of the wafer is reduced, and the product yield is improved. 本发明提供一种改善晶圆晶边状态的方法以及半导体制造设备，改善晶圆晶边状态的方法包括：在完成碳化硅沉积之后，对晶圆进行背面清洁；对清洁完成的晶圆进行监测，获取晶圆的晶边状态；基于晶圆的晶边状态，重复对晶圆进行背