Wafer film thickness detection light beam calibration method, device and system
The embodiment of the invention discloses a wafer film thickness detection light beam calibration method, device and system. The wafer film thickness detection light beam calibration method comprises the steps that a first wafer image and a second wafer image are acquired, the first wafer image comp...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The embodiment of the invention discloses a wafer film thickness detection light beam calibration method, device and system. The wafer film thickness detection light beam calibration method comprises the steps that a first wafer image and a second wafer image are acquired, the first wafer image comprises a pump light spot area formed by irradiating a to-be-detected plane on a to-be-detected wafer with a pump light beam reflected by a reflector on a deflection table, and the second wafer image comprises a pump light spot area formed by irradiating a to-be-detected plane on the to-be-detected wafer; the second wafer image comprises a pumping light spot area formed on a to-be-detected plane of the to-be-detected wafer irradiated by the detection light beam; performing image identification processing on the first wafer image to obtain a pumping light spot position of the pumping light spot area on the plane to be detected; performing image identification processing on the second wafer image to obtain a detection |
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