High frequency semiconductor package

The substrate (3) is provided on the metal plate (1). A semiconductor chip (4) is provided on a metal plate (1) in an opening (2) of a substrate (3). An input feed-through section (8) and an output feed-through section (9) provided on the substrate (3) are respectively connected to an input pad (5) and an output pad (6) of the semiconductor chip (4) by leads. The metal seal ring (12) is provided on the substrate (3) and is electrically connected to the metal plate (1) through the through-hole (15). The conductive cover (14) is bonded to the metal seal ring (12) and covers the top of the semiconductor chip (4). Both ends of the isolation metal lead (13) are electrically connected to the metal plate (1), and the ring is in contact with the lower surface of the conductive cover (14). The isolation metal lead (13) constitutes an isolation wall that divides the internal space into a region including the input feed-through section (8) and a region including the output feed-through section (9). 基板(3)设置于金属板(1)之上。在基板(