Resistive memory and manufacturing method thereof

The invention discloses a resistive memory and a manufacturing method of the resistive memory. The resistive memory comprises a first electrode part; the conversion layer is arranged on one side of the first electrode part and is in contact with the first electrode part; the second electrode part is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CAO HENG, CHANG KANGKANG, CHEN YUANLIN, JIN ZHICHENG, CHEN LIANG, WANG YINGQIAN, ZHANG LIQIN, SUN JIE, QIU SHENGFEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
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