Resistive memory and manufacturing method thereof

The invention discloses a resistive memory and a manufacturing method of the resistive memory. The resistive memory comprises a first electrode part; the conversion layer is arranged on one side of the first electrode part and is in contact with the first electrode part; the second electrode part is arranged on the side, away from the first electrode part, of the conversion layer, a first conductive layer and blocking particles are arranged on the side, facing the conversion layer, of the second electrode part, a plurality of protrusions which are transversely arranged at intervals are arranged on the first conductive layer, and the blocking particles are arranged between every two adjacent protrusions; the blocking particles protrude towards the conversion layer relative to the protrusions, and the protrusions and the blocking particles make contact with the conversion layer. Therefore, the interface between the second electrode part and the conversion layer can be improved, the conductivity, the heat dissip