Flip-chip light emitting diode and light emitting device

The invention relates to the technical field of semiconductors, and provides a flip light-emitting diode and a light-emitting device. The flip light-emitting diode comprises an epitaxial structure, a first contact electrode and a second contact electrode, the epitaxial structure comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence; the first contact electrode is located on the epitaxial structure and is electrically connected with the first semiconductor layer; the second contact electrode is located on the epitaxial structure and is electrically connected with the second semiconductor layer; the ratio of the orthographic projection area of the second contact electrode on the epitaxial structure to the orthographic projection area of the first contact electrode on the epitaxial structure is 2: 1-3: 1. Through the design, the anti-over-current capability of the light emitting diode can be effectively improved, and the risk that the capability of