SAB process method for reducing transverse etching

The invention provides an SAB process method for reducing transverse etching, and the method comprises the steps: 1, providing a substrate, forming a gate structure on the substrate, and forming a self-aligned silicide barrier layer on the substrate; 2, performing photoetching treatment on the self-aligned silicide barrier layer, and performing dry etching to reduce the thickness of the self-aligned silicide barrier layer in an area not covered by photoresist; step 3, after the photoresist is removed, performing non-crystallization injection so as to increase the etching rate of subsequent wet etching on the self-aligned silicide barrier layer; and step 4, wet etching is carried out to completely remove the self-aligned silicide barrier layer in the region where silicide needs to be formed. While the etching time and transverse etching are reduced, the etching amount is ensured, etching residues are avoided, and the failure rate of the device is reduced. 本申请提供一种减少横向刻蚀的SAB工艺方法，包括：步骤一，提供一衬底，衬底上形成有栅极结构，在衬底上形成自对准