Biosensor of field effect transistor based on two-dimensional vanadium atom doped tungsten sulfide material

The invention discloses a biosensor based on a field effect transistor of a two-dimensional vanadium atom doped tungsten sulfide material, the field effect transistor is a bottom gate structure field effect transistor, and comprises a SiO2/Si substrate, a vanadium atom doped tungsten sulfide layer arranged on the SiO2/Si substrate, and a source electrode and a drain electrode arranged on the vanadium atom doped tungsten sulfide layer; the vanadium atom doped tungsten sulfide layer is used as a conducting channel of the field effect transistor; in the SiO2/Si substrate, SiO2 serves as an insulating layer, and Si serves as a substrate and a grid electrode at the same time; the preparation method comprises the following steps: preparing the vanadium atom doped tungsten sulfide layer on the SiO2/Si substrate by using a chemical vapor deposition method; spin-coating photoresist, exposing and developing, and depositing metal to form a source electrode and a drain electrode; removing the photoresist and redundant me