Furnace tube equipment, substrate processing method and substrate processing system

The invention relates to furnace tube equipment, a substrate processing method and a substrate processing system. The furnace tube equipment comprises a body, a wafer boat, a first gas injection part, a second gas injection part and a vacuumizing device. The body is provided with a reaction chamber and a heating mechanism used for heating the reaction chamber. The wafer boat is provided with a supporting part used for supporting the substrate. Hydrogen and oxygen form free ions in a low-pressure and high-temperature environment in the reaction chamber, the free ions are diffused in a vacuum state and are in contact with the surface of the substrate to react to generate a silicon oxide film layer, and the free hydrogen ions play a role in accelerating an oxidation reaction. 本公开涉及一种炉管设备、基板处理方法与基板处理系统，炉管设备包括本体、晶舟、第一气体注射件、第二气体注射件以及抽真空器件。本体设有反应腔室，以及用于给反应腔室加热的加热机构。晶舟设有用于支撑基板的支撑部。氢气与氧气在反应腔室内部的低压高温环境下，形成游离态离子，游离态离子真空状态下发生扩散作用与基板表面接触发生反应生成氧化硅膜层，游离态氢离子起到加速氧化反应。