Method for removing polymer on surface of carbon nano tube and carbon nano tube
The invention relates to a method for removing a polymer on the surface of a carbon nano tube and the carbon nano tube, belongs to the technical field of semiconductors, and solves the problem that a method for removing the polymer on the surface of the carbon nano tube in the prior art can introduc...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a method for removing a polymer on the surface of a carbon nano tube and the carbon nano tube, belongs to the technical field of semiconductors, and solves the problem that a method for removing the polymer on the surface of the carbon nano tube in the prior art can introduce more defects. The method comprises the following steps of: 1, growing a layer of yttrium oxide film on a carbon nanotube film on the surface of a substrate by adopting a thermal mode atomic layer deposition method; and 2, corroding the yttrium oxide thin film grown in the step 1 by adopting diluted hydrochloric acid. According to the method, introduction of defects is reduced, and the interface electrical property of the carbon nanotube field effect transistor is improved.
本发明涉及一种去除碳纳米管表面聚合物的方法和碳纳米管,属于半导体技术领域,解决了现有技术中去除碳纳米管表面聚合物的方法会引入较多的缺陷的问题。所述方法包括:步骤1:采用热模式原子层沉积方法在衬底表面的碳纳米管薄膜上生长一层氧化钇薄膜;步骤2:采用稀盐酸腐蚀掉步骤1中生长的氧化钇薄膜。本发明的方法减少缺陷的引入,提高碳纳米管场效应晶体管界面电学特性。 |
---|