Interface type memristor and preparation method and application thereof

The invention discloses an interface type memristor and a preparation method and application thereof, and relates to the technical field of microelectronic devices. The interface memristor comprises a top electrode, a resistance change layer and a bottom electrode which are sequentially arranged, the bottom electrode is a silicon substrate, and the resistance change layer is a silicon oxide layer; and the silicon oxide layer is obtained by plasma oxidation treatment of a natural silicon oxide layer on the surface of the silicon substrate. The interface type memristor provided by the invention is relatively thin in thickness and high in device yield, has repeatable stable resistance switching capability, can also improve the stability of the interface type memristor, and also has the characteristic of low cost due to relatively low cost of raw materials of the resistance change layer and the plasma oxidation technology. 本发明公开了一种界面型忆阻器及其制备方法和应用，涉及微电子器件技术领域。本发明的界面忆阻器包括依次设置的顶电极、阻变层和底电极，所述底电极为硅衬底，所述阻变层为氧化硅层；所述氧化硅层