Counter circuit in CMOS image sensor

The invention discloses a counter circuit in a CMOS (Complementary Metal Oxide Semiconductor) image sensor, which is characterized in that Colen1 represents the total counting time of reset quantization, and Colen2 represents the total counting time of photoelectric conversion signal quantization; t...

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Hauptverfasser: XING DONGYANG, LU JUNGE
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a counter circuit in a CMOS (Complementary Metal Oxide Semiconductor) image sensor, which is characterized in that Colen1 represents the total counting time of reset quantization, and Colen2 represents the total counting time of photoelectric conversion signal quantization; the comparator (Comparator) outputs two pulse signals (Compout), the widths of the two pulse signals (Compout) are x1 and x2 respectively, and the counter outputs high count at the comparator; when the counter is in a reset stage, the comparator outputs a low count, and when the counter is in a signal stage of photoelectric conversion, the comparator outputs a high count; or in a reset stage, the comparator outputs a high count, and in a photoelectric conversion signal stage, the comparator outputs a low count, that is, new counting control signals compout1 and compout2 are used for controlling the counting interval of the counter. The counter circuit does not comprise a BWI module, so that the circuit structure is