Transparent laminated passive film structure and preparation method and application thereof

The invention provides a transparent laminated passive film structure and a preparation method and application thereof.The transparent laminated passive film structure comprises a first passivation layer, a second passivation layer and a third passivation layer which are sequentially arranged on the...

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Bibliographische Detailangaben
Hauptverfasser:	LIU ZUNKE, LIU WEI, YE JICHUN, ZHOU HONGKAI, OU YALI, LIAO MINGDUN, ZENG YUHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention provides a transparent laminated passive film structure and a preparation method and application thereof.The transparent laminated passive film structure comprises a first passivation layer, a second passivation layer and a third passivation layer which are sequentially arranged on the surface of a silicon substrate in a laminated mode, and the first passivation layer is made of a hydrogenated silicon oxide thin film; the material of the second passivation layer is selected from one of a hydrogenated carbon-nitrogen-silicon film, a hydrogenated carbon-silicon film, a hydrogenated nitrogen-silicon film, a hydrogenated carbon-nitrogen-oxygen-silicon film, a hydrogenated carbon-oxygen-silicon film and a hydrogenated nitrogen-oxygen-silicon film; and the third passivation layer is made of one or more laminated films selected from an aluminum hydroxide film, a hydrogenated silicon nitride film and a hydrogenated silicon oxide film. The transparent laminated passivation film structure has excellent su