Semiconductor device and forming method thereof

The invention provides a semiconductor device and a forming method thereof. The semiconductor device comprises a substrate, an epitaxial layer, an electrode structure, a first side wall doped region, a second side wall doped region and a bottom doped region. The substrate has a first conductivity type. The epitaxial layer has a first conductivity type and is disposed on the substrate. The electrode structure is arranged in the epitaxial layer. The electrode structure extends along a first direction. The first sidewall doped region has a first conductivity type and is disposed on one side of the electrode structure. The second sidewall doped region has a second conductivity type different from the first conductivity type and is disposed on the other side of the electrode structure. The bottom doped region has a second conductivity type and is disposed under the electrode structure. The second side wall doped region is connected with the bottom doped region. 本发明提供一种半导体装置及其形成方法。其中半导体装置包含基板、外延层、电极结构、第一侧壁掺杂区、第二侧壁掺