Semiconductor integrated circuit device including electrostatic discharge protection circuit

The invention relates to a semiconductor integrated circuit device including an electrostatic discharge protection circuit. The semiconductor integrated circuit device may include a first protection unit and a second protection unit. The first protection unit may include first to n-th reverse diodes connected in series between the pad and the first power supply line. The second protection unit may include at least one forward diode connected between the pad and the second power line. The first backward diode and the forward diode connected to the pad may be integrated in one conductive well without having to be separated to face each other. 本公开涉及包括静电放电保护电路的半导体集成电路装置。半导体集成电路装置可以包括第一保护单元和第二保护单元。第一保护单元可以包括串联连接在焊盘和第一电源线之间的第一反向二极管至第n反向二极管。第二保护单元可以包括连接在焊盘和第二电源线之间的至少一个正向二极管。连接到焊盘的第一反向二极管和正向二极管可以被集成在一个导电阱中，而不需要分离以彼此面对。