Vertical memory device

The vertical memory device may include a cell stack structure on a substrate, in which the cell stack structure includes insulating layer patterns and gate patterns alternately and repeatedly stacked, and in which the cell stack structure extends in a first direction parallel to an upper surface of the substrate, and in which the insulating layer patterns and the gate patterns are stacked alternately and repeatedly. An edge portion of the cell stacking region in the first direction is disposed in the second region and has a stepped portion in a stepped shape; an etch stop structure on an upper surface of each of the gate patterns of the step portion of the cell stack structure, where the etch stop structure includes a transition metal oxide; an insulating intermediate layer covering the cell stack structure; and a contact plug passing through the insulating intermediate layer and the etch stop structure, in which the contact plug is in contact with an upper surface of each of the gate patterns. 竖直存储器件可以包括：单元堆