Read circuit of memory

The invention provides a reading circuit of a memory, which comprises a sensitive amplifier, a reading array and a reference circuit, the reading array and the reference circuit are connected with the sensitive amplifier, and the reading array comprises a plurality of memory units positioned on a column; the reference circuit comprises a reference resistor and a reference array, and the reference array is used for matching the leakage current generated by the non-opened storage unit during the read operation of the read array. 本发明提供一种存储器的读电路，包括：灵敏放大器、与灵敏放大器连接的读阵列和参考电路，读阵列包括位于一列上的多个存储单元；参考电路包括参考电阻和参考阵列，参考阵列用于匹配读阵列在读操作时由未开启的存储单元产生的漏电流。