Semiconductor laser structure and preparation method thereof
The invention discloses a semiconductor laser structure and a preparation method thereof, the semiconductor laser structure comprises an epitaxial wafer body structure and a ridge forming layer connected to the surface of the epitaxial wafer body structure, the ridge forming layer comprises conducti...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a semiconductor laser structure and a preparation method thereof, the semiconductor laser structure comprises an epitaxial wafer body structure and a ridge forming layer connected to the surface of the epitaxial wafer body structure, the ridge forming layer comprises conductive ridge waveguides and loss ridge waveguides which are staggered and distributed at intervals, and the side walls of the conductive ridge waveguides and the loss ridge waveguides are arc-shaped structures which are recessed inwards; ohmic contact layers are arranged on the upper surface of the conductive ridge waveguide and the upper surface of the loss ridge waveguide, the side walls of the ohmic contact layers, the side wall of the conductive ridge waveguide and the side wall of the loss ridge waveguide are covered with arc-shaped insulating layers, and the insulating layers are subjected to roughening treatment. The upper surface of the ohmic contact layer of the loss ridge waveguide is covered with an insulati |
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