ICP (inductively coupled plasma) etching side wall defect repairing method of Micro LED (light-emitting diode)

The invention relates to an ICP (inductively coupled plasma) etching side wall defect repairing method of a Micro LED (light-emitting diode). The method comprises the following steps: (1) carrying out a wet etching process on the Micro LED; (2) carrying out thermal annealing treatment on the Micro LED subjected to the wet etching; and (3) carrying out passivation treatment on the Micro LED subjected to the thermal annealing treatment. According to the method, a specific etching mask material is selected, unique ICP etching process parameters are optimized, unique wet etching and thermal annealing treatment processes and a side wall passivation technology are created, the problem of the edge efficiency size effect in small-size Micro LED miniaturization is basically solved, and the external quantum efficiency EQE of the Micro LED is greatly improved. 本发明涉及一种Micro LED的ICP刻蚀侧壁缺陷修复方法，包括：(1)对所述Micro LED进行湿法腐蚀工艺；(2)对所述湿法腐蚀后的所述Micro LED进行热退火处理；(3)对热退火处理后的所述Micro LED进行钝化处理。本发明选择特有的刻蚀掩膜材料、优化独有的ICP刻蚀工艺参数、开创独有的湿法腐蚀、热退火处