Semiconductor device

A semiconductor device includes: a first insulating layer disposed on a substrate; a lower gate pattern disposed on the first insulating layer; a second insulating layer covering at least a portion of the lower gate pattern; a first lower gate insulating layer disposed on the lower gate pattern and the second insulating layer; a source pattern and a drain pattern disposed on the first lower gate insulating layer, where the source pattern and the drain pattern are spaced apart from each other to include a trench facing the lower gate pattern; an oxide semiconductor layer formed along surfaces of the source and drain patterns and a bottom surface of the trench; an upper gate insulating layer disposed on the oxide semiconductor layer; and an upper gate pattern disposed on the upper gate insulating layer and filling the trench. 一种半导体装置，包括：第一绝缘层，其设置在衬底上；下栅极图案，其设置在第一绝缘层上；第二绝缘层，其覆盖下栅极图案的至少一部分；第一下栅极绝缘层，其设置在下栅极图案和第二绝缘层上；源极图案和漏极图案，其设置在第一下栅极绝缘层上，其中，源极图案和漏极图案彼此间隔开以包括面对下栅极图案的沟槽；氧化物半导体层，其沿源极图案和漏极图案的表面以及沟槽的底表面形成；上栅极绝缘层，其设置在