Diode layer stack flip chip mounted to lead frame by using copper nickel tin metallization stack and diffusion soldering

Disclosed is a diode layer stack flip chip mounted to a lead frame by using a copper nickel tin metallization stack and diffusion soldering. A method (100) for manufacturing a diode layer stack comprises: providing a diode layer stack (110) comprising: a silicon carbide diode die comprising a first main surface at an anode side of the diode die and a second main surface opposite the first main surface at a cathode side of the diode die, the layer stack comprising a plurality of silicon carbide layers, a layer stack on the first major surface of the diode die, the layer stack including a copper layer disposed on the first major surface of the diode die and a tin-containing layer or an indium-containing layer disposed over the copper layer; providing a die pad (120) comprising a copper lead frame comprising: a first major surface and a second major surface opposite the first major surface; and performing a diffusion bonding process (130) for connecting the diode layer stack having the layer stack to the first m