METHOD FOR FORMING A POWER SEMICONDUCTOR MODULE DEVICE

The present disclosure provides a method for forming a power semiconductor module device. A method includes applying a pressing force on a portion of a first surface of a metal layer by means of a punch, where the metal layer is arranged on a working surface, where a second surface of the metal layer faces the working surface, where the second surface is arranged opposite the first surface, and pressing the punch against the portion of the first surface with the pressing force, the pressing force forces the material of the metal layer to flow upward against the stroke of the punch, thereby forming a sleeve extending from the first surface and away from the second surface in a vertical direction, or the pressing force is utilized to press the punch against the portion of the first surface and force the punch through the metal layer towards the second surface, thereby forming a sleeve extending from the first surface to the second surface. The pressing force forces the material of the metal layer to flow downwa