Novel preparation method of voltage stabilizing diode

The invention discloses a novel preparation method of a voltage stabilizing diode, and belongs to the field of discrete semiconductor devices. Providing a substrate, and sequentially forming an epitaxial layer, a P-region and a dielectric layer on the front surface of the substrate; defining an N well physical region on the front surfaces of the epitaxial layer and the P-region, and forming an N well region through high-energy injection; defining a P + plus physical region in the epitaxial layer, the P-region and the N well region, and forming a P + plus region through ion implantation; carrying out synchronous diffusion on the P-region, the N well region and the P + plus region; a positive electrode is led out of the P + plus region on the surface of the P + plus region through metal wiring, and a diode anode is formed; and leading out a back electrode on the back surface of the substrate through thinning and metal deposition to form a diode cathode. By means of P-region general injection, Nwell region and P