Silicon controlled rectifier chip manufacturing method and silicon controlled rectifier chip

The invention provides a silicon controlled rectifier chip manufacturing method and a silicon controlled rectifier chip, and relates to the technical field of semiconductors. The method comprises the following steps: providing a silicon wafer comprising a first surface and a second surface; evaporating metal on the first surface and the second surface to form a first metal layer and a second metal layer; performing pre-diffusion on the silicon wafer according to the first metal layer and the second metal layer, forming a first pre-diffusion layer in the silicon wafer, and forming a second pre-diffusion layer in the silicon wafer; forming a first oxide layer on the first surface, and forming a first boron layer on the first oxide layer; forming a second oxide layer on the second surface, and forming a second boron layer on the second oxide layer; and performing main diffusion on the silicon wafer according to the first pre-diffusion layer and the second pre-diffusion layer, thereby obtaining the silicon contro