Wafer cleaning solution for cleaning copper surface after chemical mechanical planarization

The invention belongs to the technical field of integrated circuit manufacturing, and relates to a wafer cleaning solution for cleaning a copper surface after chemical mechanical planarization. The wafer cleaning solution is an alkaline aqueous solution and comprises an organic amine chelating agent, a saccharide chelating agent and a nonionic surfactant, the pH value of the wafer cleaning solution is adjusted to be alkaline by using alkali which does not contain metal ions. Through the synergistic effect between the saccharide chelating agent and the organic amine, the chelating efficiency of copper can be improved, and redeposition of copper is prevented. The carbohydrate chelating agent can be chelated with CuO, so that the solubility of CuO is improved, the copper surface is effectively passivated, and the corrosion of copper is inhibited. No inorganic base is used, and secondary pollution caused by introduction of metal ions is reduced. The cleaning solution has the advantages of no toxicity, environment