Dual-coated QDs (at) SiO2 (at) Al2O3 quantum dot and preparation method thereof

The invention belongs to the field of quantum dot materials, and particularly relates to a double-coated QDs (at) SiO2 (at) Al2O3 quantum dot and a preparation method thereof. The preparation method comprises the following steps: S1, adding quantum dots into a mixed organic solution, and stirring to...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIU ZIYANG, PAN JIANGYONG, GAO ZHENGHAO, HAN JIEWEI, GU HUI, FENG QIAN, WEI YUYANG, WANG LIXI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention belongs to the field of quantum dot materials, and particularly relates to a double-coated QDs (at) SiO2 (at) Al2O3 quantum dot and a preparation method thereof. The preparation method comprises the following steps: S1, adding quantum dots into a mixed organic solution, and stirring to obtain a quantum dot solution; s2, adding a silicon source solution into the quantum dot solution, and stirring until the precipitate is flocculated to obtain a mixture I; s3, carrying out centrifugal treatment on the mixture I, collecting a precipitate, washing the precipitate for multiple times by using an organic solvent, and then carrying out vacuum freezing and drying treatment on the washed precipitate to obtain QDs (at) SiO2 powder; s4, the QDs (at) SiO2 powder sample is screened through a screen, large caking samples are removed, the screened QDs (at) SiO2 powder is added into an atomic layer deposition reactor, trimethyl aluminum serves as a precursor of Al2O3, N2 serves as carrier gas for purging, the QD