Preparation method of planar monocrystalline silicon for reducing intermediate-frequency error and high-frequency roughness

The invention relates to the technical field of optical processing, in particular to a planar monocrystalline silicon processing method capable of reducing intermediate-frequency errors and high-frequency roughness. According to the method, grinding treatment, rough polishing treatment and two times of fine polishing treatment are sequentially carried out on a machined and formed planar monocrystalline silicon blank, and preparation of the planar monocrystalline silicon with the intermediate frequency error reduced and the high-frequency roughness reduced is completed. The intermediate frequency error of the monocrystalline silicon surface is detected through the interferometer, and the roughness of the monocrystalline silicon surface is detected through the atomic force microscope; detection shows that the preparation method can effectively reduce the intermediate-frequency error and the high-frequency roughness of the planar monocrystalline silicon. 本发明涉及光学加工技术领域，尤其是涉及一种降低中频误差和高频粗糙度的平面单晶硅加工方法。本发明对加工成型的平面单晶硅