Method of manufacturing spin valve structure

本发明涉及一种制造GMR型自旋阀结构(1)的方法。这样一种结构包括一磁性层(11a 11b)、一非磁性层(15)和一铁磁材料传感层(17)的叠层。为了获得具有很好GMR效应的自旋阀结构，该方法包括下列特定步骤：传感层铁磁材料的氧化；在被氧化的铁磁材料上淀积铝；利用来自被氧化的铁磁材料的氧氧化被淀积的铝。 The invention relates to a method of manufacturing a spin valve structure (1) of the GMR-type. Such a structure includes a stack of a magnetic laye...

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Bibliographische Detailangaben
Hauptverfasser:	M.F. GILLIES, A.E.T. KUIPER
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TESTING TRANSFORMERS
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Beschreibung
Zusammenfassung:	本发明涉及一种制造GMR型自旋阀结构(1)的方法。这样一种结构包括一磁性层(11a 11b)、一非磁性层(15)和一铁磁材料传感层(17)的叠层。为了获得具有很好GMR效应的自旋阀结构，该方法包括下列特定步骤：传感层铁磁材料的氧化；在被氧化的铁磁材料上淀积铝；利用来自被氧化的铁磁材料的氧氧化被淀积的铝。 The invention relates to a method of manufacturing a spin valve structure (1) of the GMR-type. Such a structure includes a stack of a magnetic layer (11a 11b), a nonmagnetic layer (15) and a sense layer (17) of a ferromagnetic material. In order to obtain a spin valve structure having a very good GMR effect the method comprises the following specific steps: oxidation of the ferromagnetic material of the sense layer; deposition of aluminium on the oxidized ferromagnetic material; oxidation of the deposited aluminium using oxygen from the oxidized ferromagnetic material.