Zinc porphyrin covalent modified graphene quantum dot memristor and preparation and application thereof

The invention belongs to the technical field of organic information storage, and particularly provides a memristor of zinc porphyrin covalently modified graphene quantum dots and preparation and application thereof. The structure of the device is a classic sandwich structure, a bottom electrode is a glass substrate coated with ITO, an active layer is a ZnTPP-g-GQDs: PVP film, and a top electrode is made of Al. By applying different voltages to the device, the device shows the repeatedly erasable storage performance, and shows the non-volatile storage rewritable switching property that only the voltage direction needs to be adjusted and the power consumption is small. Besides, the device shows current capable of being continuously regulated and controlled under a small scanning voltage, enhancement and suppression of biological synapses are simulated through the prepared resistive random access memory device, and the device has excellent prospects in the aspects of preparation of miniaturized devices and reduc