High-maintaining-voltage SCR device for integrated circuit ESD protection
The invention belongs to the technical field of electronics, relates to an electrostatic discharge protection device, and particularly provides a high-maintaining-voltage SCR device for integrated circuit ESD protection. A first conductive type heavily doped region is inserted into a second conducti...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention belongs to the technical field of electronics, relates to an electrostatic discharge protection device, and particularly provides a high-maintaining-voltage SCR device for integrated circuit ESD protection. A first conductive type heavily doped region is inserted into a second conductive type well region, a gate oxide layer is inserted into the surface of the second conductive type well region between the first conductive type heavily doped region and the first conductive type heavily doped region, and a polysilicon gate covers the gate oxide layer. The polysilicon gate and the adjacent first conductive type heavily doped region are connected to a cathode through a metal wire, and a second conductive type heavily doped region is inserted into the surface between the second conductive type well region and the first conductive type well region, so that the improved SCR device is formed; a current discharge path of the device is changed from an original in-vivo SCR path to four paths, namely a PNP |
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