STACKED DEVICE STRUCTURE AND METHOD OF FORMING THE SAME AND METHOD OF FORMING TRANSISTOR

Disclosed herein are dipole engineering techniques for devices of stacked device structures. An exemplary method for forming a gate stack of a transistor (e.g., a top transistor) of a transistor stack includes forming a high-k dielectric layer; forming an n-dipole dopant source layer over the high-k...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEN WEIYUAN, LIAO SIYA, HAYASHI MASAAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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