Near-infrared response type implantable photoelectrochemical sensor

The invention discloses a near-infrared response type implantable photoelectrochemical sensor, and provides a preparation method of a near-infrared response type photoelectric material and an electrode by combining an electrochemical anodic oxidation method and a vacuum calcination method, and a nea...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHANG ZHONGHAI, TAO LEIJUAN, WANG BING
Format: Patent
Sprache:chi ; eng
Schlagworte:
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