Near-infrared response type implantable photoelectrochemical sensor
The invention discloses a near-infrared response type implantable photoelectrochemical sensor, and provides a preparation method of a near-infrared response type photoelectric material and an electrode by combining an electrochemical anodic oxidation method and a vacuum calcination method, and a nea...
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Format: | Patent |
Sprache: | chi ; eng |
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