Near-infrared response type implantable photoelectrochemical sensor

The invention discloses a near-infrared response type implantable photoelectrochemical sensor, and provides a preparation method of a near-infrared response type photoelectric material and an electrode by combining an electrochemical anodic oxidation method and a vacuum calcination method, and a near-infrared light response type photoelectrochemical sensor constructed by the near-infrared response type photoelectric material and the electrode. The photoelectrochemical in-vivo detection method mainly solves the problem of photoelectrochemical response of a photoelectrochemical semiconductor material in a living body, enables photoelectrochemical in-vivo detection to be realized, and compared with an existing electrochemical detection technology, the photoelectrochemical in-vivo detection method can be realized under the condition of no external voltage, so that electrical stimulation to living cells is avoided, and the detection accuracy is improved. And a more accurate detection signal is obtained. 本发明公开了一种近红