Novel three-dimensional memory array and preparation method thereof

The invention provides a novel three-dimensional memory array and a preparation method thereof. The three-dimensional memory array comprises a base transistor and memory units, wherein the memory units are electrically connected with the base transistor and are distributed in an array; wherein one end of the storage unit is connected with a bit line, and the other end of the storage unit is connected with a word line; moreover, the storage units in the same layer are connected in parallel through the word lines, and the storage units in different layers are connected through the electric connection holes between the layers; the bottom electrodes of all the storage units are connected with the drain electrode of the base transistor; and the bit line, the word line and the base transistor jointly control the state of the storage unit. According to the invention, the storage density and scale of the array can be improved. 本发明提供一种新型三维存储器阵列及制备方法，其中的三维存储器阵列包括底座晶体管以及与所述底座晶体管电连接，并且呈阵列分布的存储单元；其中，所述存储单元的一端与位线连接，另一端与字线连