Three-dimensional NOR memory structure

The subject of the invention is a data storage circuit of the NOR type comprising:-a three-dimensional memory structure manufactured on a first semiconductor substrate and comprising a plurality of memory planes, each plane forming a two-dimensional array of memory cells. Each memory cell has a selection node, a first input/output node, and a second input/output node. A three-dimensional memory structure has an upper surface comprising a plurality of connectors distributed over the surface; each connector is connected to at least one of the first input/output node or the second input/output node of a given column; -a control circuit manufactured on the second semiconductor substrate; an interconnection structure comprising: a plurality of bonding pads placed between the control circuit and the upper surface; the plurality of bond pads form a periodically repeating unit pattern in a plane parallel to the upper surface. 本发明的主题是一种NOR类型的数据存储电路，包括：-三维存储器结构，其在第一半导体衬底上制造并且包括多个存储平面，每个平面形成存储单元的二维阵列。每个存储单元具有选择节点、第一输入/输