Ultra-wide bandgap semiconductor diode with multi-region JTE structure

The invention discloses an ultra-wide bandgap semiconductor diode with a multi-region JTE structure. The ultra-wide bandgap semiconductor diode comprises a substrate layer, an epitaxial layer, a dielectric layer, a cathode metal layer, a JTE region and an anode metal layer, wherein the epitaxial layer and the substrate layer are made of a first ultra-wide bandgap semiconductor material; the JTE region is a second ultra-wide forbidden band semiconductor and forms a heterojunction structure with the epitaxial layer to improve electric field distribution and optimize device performance. According to the invention, the heterojunction is formed at the edge of the cellular region of the device by utilizing multiple times of photoetching and deposition technologies of the positive photoresist, so that the multi-region JTE structure with the mesa is formed. According to the structure, the electric field concentration phenomenon caused by the curvature effect of the device can be relieved or even eliminated through th